LH28F160BGHE-TTL10

LH28F160BGHE-TTL10, 16M-Bit 2M x 8/1M x 16 Smart 3 Flash Memory, 3V, 100ns, TSOP

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Price:: US $2.50~2.90 / piece [Get Latest Price]

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	US $2.50~2.90

PartNumber:: LH28F160BGHE-TTL10

Brand:: Sharp Electrionic Components - Sharp | Pack: SOP | D/C: 00+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-06-29

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Part Number:LH28F160BGHE-TTL10
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Product Summary

The LH28F160BGHE-TTL10 16 M-bit (1 MB x 16) Smart 3 Flash Memory is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BGHE-TTL10 can operate at VCC and VPP = 2.7 V. The low voltage operation capability realizes longer battery life and suits for cellular phone application. The boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. The enhanced suspend capabilities of LH28F160BGHE-TTL10 provide for an ideal solution for code + data storage applications.

Parametrics

LH28F160BGHE-TTL10 absolute maximum ratings: (1)Storage Temperature: –65 to +125℃; (2)Voltage On Any Pin (except VCC, VPP, and RP#): –0.5 V to VCC+0.5 V; (3)VCC Supply Voltage: –0.2 to +3.9 V; (4)VPP Update Voltage during Block Erase and Word Write: –0.2 to +14.0 V; (5)RP# Voltage: –0.5 to +14.0 V; (6)Output Short Circuit Current: 100 mA.

Features

LH28F160BGHE-TTL10 features: (1)Smart 3 technology; (2)High performance read access time; (3)Enhanced automated suspend options; (4)SRAM-compatible write interface; (5)Optimized array blocking architecture; (6)Enhanced cycling capability: 100 000 block erase cycles; (7)Low power management; (8)Automated word write and block erase; (9)ETOXTM V nonvolatile flash technology.