Product Summary

The MOCD217R2VM Dual Channel Phototransistor consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. The MOCD217R2VM is ideally suited for high density applications and eliminates the need for through-the-board mounting. The MOCD217R2VM is ideal for: (1)Interfacing and coupling systems of different potentials and impedances; (2)General purpose switching circuits; (3)Monitor and detection circuits.

Parametrics

MOCD217R2VM absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 30 V; (2)VECO, Emitter-Base Voltage: 7.0 V; (3)IC, Collector Current-Continuous: 150 mA; (4)IF, Forward Current – Continuous: 60 mA; (5)IF(pk), Forward Current – Peak (PW = 100μs, 120 pps): 1.0 A; (6)VR, Reverse Voltage: 6.0 V; (7)VISO, Input-Output Isolation Voltage (f = 60Hz, t = 1 min.): 2500 Vac(rms); (8)PD, Total Device Power Dissipation @ TA= 25℃: 250 mW; (9)TA, Ambient Operating Temperature Range: -40 to +100 ℃; (10)Tstg, Storage Temperature Range: -40 to +150 ℃.

Features

MOCD217R2VM features: (1)UL recognized (File #E90700, Volume 2); (2)VDE recognized (File #136616) (add option V for VDE approval, i.e, MOCD217VM); (3)Low input current (specified @ 1mA); (4)Minimum BVCEO of 30 Volts guaranteed; (5)Convenient plastic SOIC-8 surface mountable package style; (6)Standard SOIC-8 footprint, with 0.050" lead spacing; (7)Compatible with dual wave, vapor phase and IR reflow soldering; (8)High input-output isolation of 2500 VAC(rms) guaranteed.

Diagrams

MOCD217R2VM circuit diagram

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